Design of a Novel W-Sinker RF LDMOS
نویسندگان
چکیده
منابع مشابه
Analysis of a Novel Strained Silicon RF LDMOS
In this paper we propose a novel RF LDMOS structure which employs a thin strained silicon layer at the top of the channel and the N-Drift region. The strain is induced by a relaxed Si0.8 Ge0.2 layer which is on top of a compositionally graded SiGe buffer. We explain the underlying physics of the device and compare the proposed device with a conventional LDMOS in terms of energy band diagram and...
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ژورنال
عنوان ژورنال: Advances in Condensed Matter Physics
سال: 2015
ISSN: 1687-8108,1687-8124
DOI: 10.1155/2015/312646